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FQP13N50 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FQP13N50
- Package: TO-220-3
- Datasheet:
- Stock: 1338
- Description: FQP13N50 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Nominal Vgs | 5 V |
| Height | 6.35mm |
| Length | 6.35mm |
| Width | 6.35mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 5 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Number of Pins | 3 |
| Weight | 1.8g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2013 |
| Series | QFET® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Resistance | 430mOhm |
| Terminal Finish | Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 500V |
| Technology | MOSFET (Metal Oxide) |
| Current Rating | 12.5A |
| Number of Elements | 1 |
| Power Dissipation-Max | 170W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 170W |
| Turn On Delay Time | 40 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 430m Ω @ 6.25A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 2300pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 12.5A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 60nC @ 10V |
| Rise Time | 140ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Fall Time (Typ) | 85 ns |
| Turn-Off Delay Time | 100 ns |
| Continuous Drain Current (ID) | 12.5A |
| Threshold Voltage | 5V |
| JEDEC-95 Code | TO-220AB |
| Gate to Source Voltage (Vgs) | 30V |
| Drain to Source Breakdown Voltage | 500V |
| Pulsed Drain Current-Max (IDM) | 50A |
| Dual Supply Voltage | 500V |
FQP13N50 Description
FQP13N50 N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This cutting-edge MOSFET technology has been specifically designed to offer excellent switching performance, high avalanche energy strength, and reduced on-state resistance. For switched-mode power supplies, active power factor correction (PFC), and electronic lamp ballasts, FQP13N50 MOSFETs are appropriate.
FQP13N50 Features
12.5A, 500V, RDS(on) = 430mΩ(Max.) @VGS = 10 V, ID = 6.25A
Low Crss ( Typ. 25pF)
100% avalanche tested
Low gate charge ( Typ. 45nC)
FQP13N50 Applications
Industrial uses
Domestic uses
Low Power Standby
Bias Voltage Supplies
Metering, and Security Systems
High-Efficiency Replacement for High Voltage Linear Regulators
