Products
Manufacturer
RFQ
NEWS
ContactFQNL2N50BTA
MOSFET (Metal Oxide) N-Channel Tape & Box (TB) 5.3 Ω @ 175mA, 10V ±30V 230pF @ 25V 8nC @ 10V TO-226-3, TO-92-3 Long Body (Formed Leads)
- Manufacturer: ON Semiconductor
- NO: 598-FQNL2N50BTA
- Package: TO-226-3, TO-92-3 Long Body (Formed Leads)
- Datasheet:
- Stock: 3995
- Description: MOSFET (Metal Oxide) N-Channel Tape & Box (TB) 5.3 Ω @ 175mA, 10V ±30V 230pF @ 25V 8nC @ 10V TO-226-3, TO-92-3 Long Body (Formed Leads) (Kg)
- Delivery:
- Payment:
In Stock
Please send RFQ , we will respond immediately.
.png)
.png)
.png)
.png)
.png)
.png)
.png)
.png)
.png)
You may place an order without registering to Chip Smart.
We strongly suggest you sign in before purchasing as you
can track your order in real time.
For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.
RFQ (Request for Quotations)It is recommended to request for quotations to get the latest
prices and inventories about the part.
Our sales will reply to
your request by email within 24 hours.
1. You'll receive an order information email in your inbox.
(Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some
extent, the sales manager is going to reconfirm the order and let you know if there
are any updates.
Shipping starts at $40, but some countries will exceed $40. For
example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time
zone and country.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.5W |
| Turn On Delay Time | 6 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 5.3 Ω @ 175mA, 10V |
| Vgs(th) (Max) @ Id | 3.7V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 230pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 350mA Tc |
| Gate Charge (Qg) (Max) @ Vgs | 8nC @ 10V |
| Rise Time | 25ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Fall Time (Typ) | 25 ns |
| Turn-Off Delay Time | 10 ns |
| Continuous Drain Current (ID) | 350mA |
| Gate to Source Voltage (Vgs) | 30V |
| Drain to Source Breakdown Voltage | 500V |
| Height | 8mm |
| Length | 4.9mm |
| Width | 3.9mm |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 6 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 Long Body (Formed Leads) |
| Number of Pins | 3 |
| Weight | 371.1027mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Box (TB) |
| Published | 2001 |
| Series | QFET® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 500V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | BOTTOM |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Current Rating | 350mA |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Power Dissipation-Max | 1.5W Tc |
FQNL2N50BTA Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 230pF @ 25V maximal input capacitance.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 350mA.Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=500V. And this device has 500V drain to source breakdown voltage.It is [10 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 6 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.Using drive voltage (10V) reduces this device's overall power consumption.
FQNL2N50BTA Features
a continuous drain current (ID) of 350mA
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 10 ns
FQNL2N50BTA Applications
There are a lot of ON Semiconductor FQNL2N50BTA applications of single MOSFETs transistors.
- Power Tools
- Synchronous Rectification
- General Purpose Interfacing Switch
- Motor drives and Uninterruptible Power Supplies
- Load switching
- Industrial Power Supplies
- Solar Inverter
- Telecom 1 Sever Power Supplies
- Lighting
- LCD/LED TV
