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MOSFET (Metal Oxide) N-Channel Tape & Box (TB) 11.5 Ω @ 150mA, 10V ±30V 170pF @ 25V 6.2nC @ 10V TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Manufacturer: ON Semiconductor
- NO: 598-FQN1N60CTA
- Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet:
- Stock: 2286
- Description: MOSFET (Metal Oxide) N-Channel Tape & Box (TB) 11.5 Ω @ 150mA, 10V ±30V 170pF @ 25V 6.2nC @ 10V TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) (Kg)
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| Parameters | |
|---|---|
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1W |
| Turn On Delay Time | 7 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 11.5 Ω @ 150mA, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 170pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 300mA Tc |
| Gate Charge (Qg) (Max) @ Vgs | 6.2nC @ 10V |
| Rise Time | 21ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Fall Time (Typ) | 27 ns |
| Turn-Off Delay Time | 13 ns |
| Continuous Drain Current (ID) | 300mA |
| Threshold Voltage | 4V |
| Gate to Source Voltage (Vgs) | 30V |
| Drain to Source Breakdown Voltage | 600V |
| Feedback Cap-Max (Crss) | 6 pF |
| Height | 5.33mm |
| Length | 5.2mm |
| Width | 4.19mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 14 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Number of Pins | 3 |
| Weight | 240mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Box (TB) |
| Published | 2013 |
| Series | QFET® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Resistance | 11.5Ohm |
| Terminal Finish | Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | BOTTOM |
| Number of Elements | 1 |
| Power Dissipation-Max | 1W Ta 3W Tc |
| Element Configuration | Single |
FQN1N60CTA Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been specially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched-mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
FQN1N60CTA Features
0.30 A, 600 V, RDS(on) = 11.5 ? (Max.) @ VGS = 10 V, ID = 0.15 A
Low Gate Charge (Typ. 4.8 nC)
Low Crss (Typ. 3.5 pF)
100% Avalanche Tested
