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ContactFQD2N100TM
FQD2N100TM datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FQD2N100TM
- Package: TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet:
- Stock: 6347
- Description: FQD2N100TM datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 10 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Number of Pins | 3 |
| Weight | 260.37mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2013 |
| Series | QFET® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Resistance | 9Ohm |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 900V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Form | GULL WING |
| Current Rating | 1.6A |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 2.5W Ta 50W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2.5W |
| Case Connection | DRAIN |
| Turn On Delay Time | 13 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 9 Ω @ 800mA, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 520pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 1.6A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 15.5nC @ 10V |
| Rise Time | 30ns |
| Drain to Source Voltage (Vdss) | 1000V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Fall Time (Typ) | 35 ns |
| Turn-Off Delay Time | 25 ns |
| Continuous Drain Current (ID) | 1.6A |
| Threshold Voltage | 5V |
| Gate to Source Voltage (Vgs) | 30V |
| Drain to Source Breakdown Voltage | 1kV |
| Pulsed Drain Current-Max (IDM) | 6.4A |
| Max Junction Temperature (Tj) | 150°C |
| Nominal Vgs | 5 V |
| Height | 2.517mm |
| Length | 6.6mm |
| Width | 6.1mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
FQD2N100TM Description
The FQD2N100TM is an N-channel QFET? enhancement-mode power MOSFET produced using planar stripe and DMOS technology. The advanced MOSFET FQD2N100TM has been specially tailored to reduce ON-state resistance and to provide superior switching performance and high avalanche energy strength. This FQD2N100TM is suitable for switched-mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
FQD2N100TM Features
1.6A, 1000V, RDS(on) = 9Ω(Max.) @VGS = 10 V, ID = 0.8A
Low gate charge ( Typ. 12nC)
Low Crss ( Typ. 5pF)
100% avalanche tested
RoHS Compliant
FQD2N100TM Applications
Switched mode power supplies
Active power factor correction (PFC)
Electronic lamp ballasts
Lighting
