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ContactFQD16N25CTM
FQD16N25CTM datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FQD16N25CTM
- Package: TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet:
- Stock: 3681
- Description: FQD16N25CTM datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 7 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Number of Pins | 3 |
| Weight | 260.37mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2006 |
| Series | QFET® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Resistance | 270mOhm |
| Additional Feature | AVALANCHE RATED |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 250V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Current Rating | 16A |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | R-PSSO-G2 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Power Dissipation-Max | 160W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 160W |
| Turn On Delay Time | 15 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 270m Ω @ 8A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1080pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 16A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 53.5nC @ 10V |
| Rise Time | 130ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Fall Time (Typ) | 105 ns |
| Turn-Off Delay Time | 135 ns |
| Continuous Drain Current (ID) | 16A |
| Threshold Voltage | 4V |
| Gate to Source Voltage (Vgs) | 30V |
| Drain to Source Breakdown Voltage | 250V |
| Pulsed Drain Current-Max (IDM) | 64A |
| Nominal Vgs | 4 V |
| Height | 2.3mm |
| Length | 6.6mm |
| Width | 6.1mm |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
FQD16N25CTM Description
The FQD16N25CTM is a QFET? N-channel enhancement-mode Power MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET FQD16N25CTM has been specially tailored to reduce ON-state resistance, and provide superior switching performance and high avalanche energy strength. The onsemi FQD16N25CTM is suitable for switched-mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
FQD16N25CTM Features
16A, 250V, RDS(on) = 270mΩ(Max.) @VGS = 10 V, ID = 8A
Low gate charge ( Typ. 41nC)
Low Crss ( Typ. 68pF)
100% avalanche testedcapability
FQD16N25CTM Applications
LCD TV
PDP TV
LED TV
Electronic lamp ballasts
Active power factor correction (PFC)
