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ContactFQD11P06TM
FQD11P06TM datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FQD11P06TM
- Package: TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet:
- Stock: 1979
- Description: FQD11P06TM datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 4 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Number of Pins | 3 |
| Weight | 260.37mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2004 |
| Series | QFET® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Resistance | 185mOhm |
| Terminal Finish | Tin (Sn) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -60V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Form | GULL WING |
| Current Rating | -9.4A |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 2.5W Ta 38W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2.5W |
| Case Connection | DRAIN |
| Turn On Delay Time | 6.5 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 185m Ω @ 4.7A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 550pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 9.4A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 17nC @ 10V |
| Rise Time | 40ns |
| Drain to Source Voltage (Vdss) | 60V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Fall Time (Typ) | 45 ns |
| Turn-Off Delay Time | 15 ns |
| Continuous Drain Current (ID) | -9.4A |
| Threshold Voltage | -4V |
| Gate to Source Voltage (Vgs) | 30V |
| Drain to Source Breakdown Voltage | -60V |
| Max Junction Temperature (Tj) | 150°C |
| Height | 2.517mm |
| Length | 6.6mm |
| Width | 6.1mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
The FQD11P06TM is a P-Channel enhancement mode power MOSFET manufactured by Fairchild Semiconductor using its own planarstripe and DMOS technology. This sophisticated MOSFET technology has been specifically designed to deliver excellent switching performance and strong avalanche energy strength while reducing on-state resistance.
FQD11P06TM Features
-9.4A -60 V, Ros(on)= 185 mΩ (Max.) @Vcs=-10 V, lD=-4.7 A
Low Gate Charge (Typ. 13 nC)
Low Crss (Typ. 45 pF)
100% Avalanche Tested
FQD11P06TM Application
Switched mode power supply
Audio amplifiers
Direct current motor control
Variable switching power applications
