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ContactFQD10N20CTM
FQD10N20CTM datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FQD10N20CTM
- Package: TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet:
- Stock: 5073
- Description: FQD10N20CTM datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 8 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Number of Pins | 3 |
| Weight | 260.37mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | QFET® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Resistance | 360mOhm |
| Additional Feature | FAST SWITCHING |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 200V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Current Rating | 7.8A |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | R-PSSO-G2 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Power Dissipation-Max | 50W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 50W |
| Case Connection | DRAIN |
| Turn On Delay Time | 11 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 360m Ω @ 3.9A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 510pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 7.8A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 26nC @ 10V |
| Rise Time | 92ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Fall Time (Typ) | 72 ns |
| Turn-Off Delay Time | 70 ns |
| Continuous Drain Current (ID) | 7.8A |
| Threshold Voltage | 4V |
| JEDEC-95 Code | TO-252AA |
| Gate to Source Voltage (Vgs) | 30V |
| Drain to Source Breakdown Voltage | 200V |
| Height | 2.3mm |
| Length | 6.6mm |
| Width | 6.1mm |
| REACH SVHC | No SVHC |
FQD10N20CTM Description
A patented planar stripe and DMOS technology are used to create the FQD10N20CTM N-Channel enhancement mode power MOSFET. This sophisticated MOSFET technology has been specifically developed to lower on-state resistance, improve switching performance, and increase avalanche energy strength. Switched-mode power supply, active power factor correction (PFC), and electronic light ballasts can all benefit from FQD10N20CTM.
FQD10N20CTM Features
Low Crss ( Typ. 40.5pF)
100% avalanche tested
Low gate charge ( Typ. 20nC)
7.8A, 200V, RDS(on) = 360mΩ(Max.) @VGS = 10 V, ID = 3.9A
FQD10N20CTM Applications
LED TV
CRT/RPTV
Other Industrial
