FQB27N25TM-F085

FQB27N25TM-F085 Overview

When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 972 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1800pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 25.5A. A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 81 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 36 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.A normal operation of the DS requires keeping the breakdown voltage above 250V.This transistor requires a drain-source voltage (Vdss) of 250V.Using drive voltage (10V), this device helps reduce its power consumption.

FQB27N25TM-F085 Features

the avalanche energy rating (Eas) is 972 mJ
a continuous drain current (ID) of 25.5A
the turn-off delay time is 81 ns
a 250V drain to source voltage (Vdss)

FQB27N25TM-F085 Applications

There are a lot of ON Semiconductor FQB27N25TM-F085 applications of single MOSFETs transistors.

• Lighting
• Industrial Power Supplies
• LCD/LED TV
• Power Management Functions
• Battery Protection Circuit
• Lighting, Server, Telecom and UPS.
• Power Tools
• Motor drives and Uninterruptible Power Supplies
• Consumer Appliances
• Server power supplies