FQB25N33TM-F085

FQB25N33TM-F085 Overview

CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2010pF @ 25V.This device conducts a continuous drain current (ID) of 25A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 90 ns occurs as the input capacitance charges before drain current conduction commences.A maximum pulsed drain current of 100A is the maximum peak drain current rated for this device.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 20 ns.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor requires a 330V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

FQB25N33TM-F085 Features

a continuous drain current (ID) of 25A
the turn-off delay time is 90 ns
based on its rated peak drain current 100A.
a 330V drain to source voltage (Vdss)

FQB25N33TM-F085 Applications

There are a lot of ON Semiconductor FQB25N33TM-F085 applications of single MOSFETs transistors.

• Synchronous Rectification for ATX 1 Server I Telecom PSU
• DC-to-DC converters
• Battery Protection Circuit
• Motor Drives and Uninterruptible Power Supples
• Motor drives and Uninterruptible Power Supplies
• Lighting
• Telecom 1 Sever Power Supplies
• Solar Inverter
• Load switching
• Consumer Appliances