FQA9N90C-F109

MOSFET (Metal Oxide) N-Channel Tube 1.4 Ω @ 4.5A, 10V ±30V 2730pF @ 25V 58nC @ 10V TO-3P-3, SC-65-3


  • Manufacturer: ON Semiconductor
  • NO: 598-FQA9N90C-F109
  • Package: TO-3P-3, SC-65-3
  • Datasheet: pdf
  • Stock: 6068
  • Description: MOSFET (Metal Oxide) N-Channel Tube 1.4 Ω @ 4.5A, 10V ±30V 2730pF @ 25V 58nC @ 10V TO-3P-3, SC-65-3 (Kg)

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SPECIFICATIONS

Parameters
Number of Terminations 3
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 280W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 280W
Turn On Delay Time 50 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.4 Ω @ 4.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2730pF @ 25V
Current - Continuous Drain (Id) @ 25°C 9A Tc
Gate Charge (Qg) (Max) @ Vgs 58nC @ 10V
Rise Time 120ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 75 ns
Turn-Off Delay Time 100 ns
Continuous Drain Current (ID) 9A
Threshold Voltage 5V
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 9A
Drain to Source Breakdown Voltage 900V
Avalanche Energy Rating (Eas) 900 mJ
Height 18.9mm
Length 15.8mm
Width 5mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Factory Lead Time 10 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3
Weight 6.401g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2007
Series QFET®
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)

FQA9N90C-F109 Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 900 mJ.A device's maximum input capacitance is 2730pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.The drain current is the maximum continuous current the device can conduct, and this device has 9A continuous drain current (ID).In this device, the drain-source breakdown voltage is 900V and VGS=900V, so the drain-source breakdown voltage is 900V in this case.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 9A.When the device is turned off, a turn-off delay time of 100 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 50 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 5V.Using drive voltage (10V), this device helps reduce its power consumption.

FQA9N90C-F109 Features


the avalanche energy rating (Eas) is 900 mJ
a continuous drain current (ID) of 9A
a drain-to-source breakdown voltage of 900V voltage
the turn-off delay time is 100 ns
a threshold voltage of 5V

FQA9N90C-F109 Applications


There are a lot of ON Semiconductor FQA9N90C-F109 applications of single MOSFETs transistors.

  • Uninterruptible Power Supply
  • DC-to-DC converters
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Load switching
  • Synchronous Rectification
  • Lighting, Server, Telecom and UPS.
  • Power Management Functions
  • Power Tools
  • LCD/LED/ PDP TV Lighting
  • Telecom 1 Sever Power Supplies

In Stock

Please send RFQ , we will respond immediately.