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MOSFET (Metal Oxide) N-Channel Tube 23m Ω @ 35A, 10V ±25V 3300pF @ 25V 110nC @ 10V TO-3P-3, SC-65-3
- Manufacturer: ON Semiconductor
- NO: 598-FQA70N10
- Package: TO-3P-3, SC-65-3
- Datasheet:
- Stock: 1635
- Description: MOSFET (Metal Oxide) N-Channel Tube 23m Ω @ 35A, 10V ±25V 3300pF @ 25V 110nC @ 10V TO-3P-3, SC-65-3 (Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 11 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 7 hours ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-3P-3, SC-65-3 |
| Number of Pins | 3 |
| Weight | 6.401g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2000 |
| Series | QFET® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Resistance | 23mOhm |
| Terminal Finish | Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 100V |
| Technology | MOSFET (Metal Oxide) |
| Current Rating | 70A |
| Number of Elements | 1 |
| Power Dissipation-Max | 214W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 214W |
| Turn On Delay Time | 30 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 23m Ω @ 35A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 3300pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 70A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 110nC @ 10V |
| Rise Time | 470ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Fall Time (Typ) | 160 ns |
| Turn-Off Delay Time | 130 ns |
| Continuous Drain Current (ID) | 70A |
| Threshold Voltage | 4V |
| Gate to Source Voltage (Vgs) | 25V |
| Drain to Source Breakdown Voltage | 100V |
| Pulsed Drain Current-Max (IDM) | 280A |
| Dual Supply Voltage | 100V |
| Nominal Vgs | 4 V |
| Height | 18.9mm |
| Length | 15.8mm |
| Width | 5mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
FQA70N10 Description
This N-Channel cnhancement mode power MOSFET isproduced usingFairchldScmiconductors proprietary planar stripeand DMOS technology. This advanced MOSFET technoliogy has been cspecialiy tailored to reduce on-state resistance,and toprovide supenior switchingperformance and high awalanche energy sirength. These devices are suitable for switched mode power supples,cudio ampiifier, DC motor control, and variable switching power applications.
FQA70N10 Features
70A, 100 V, RDsjanj) = 23 m
(Max) @Ves = 10v,l= 35A
Low Gate Charge (Typ.85 nC)
Low Crss ( Typ.150 pF)
100% Awalanche Tested
175C Maximum Junction
Temperature Rating
