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FQA46N15 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FQA46N15
- Package: TO-3P-3, SC-65-3
- Datasheet:
- Stock: 6990
- Description: FQA46N15 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 5 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 2 hours ago) |
| Contact Plating | Tin |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-3P-3, SC-65-3 |
| Number of Pins | 3 |
| Weight | 6.401g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2005 |
| Series | QFET® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Resistance | 42MOhm |
| Additional Feature | FAST SWITCHING |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 150V |
| Technology | MOSFET (Metal Oxide) |
| Current Rating | 50A |
| Number of Elements | 1 |
| Power Dissipation-Max | 250W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 250W |
| Turn On Delay Time | 35 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 42m Ω @ 25A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 3250pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 50A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 110nC @ 10V |
| Rise Time | 320ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Fall Time (Typ) | 200 ns |
| Turn-Off Delay Time | 210 ns |
| Continuous Drain Current (ID) | 50A |
| Threshold Voltage | 4V |
| Gate to Source Voltage (Vgs) | 25V |
| Drain to Source Breakdown Voltage | 150V |
| Pulsed Drain Current-Max (IDM) | 200A |
| Avalanche Energy Rating (Eas) | 650 mJ |
| Height | 20.1mm |
| Length | 15.8mm |
| Width | 5mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
FQA46N15 Description
The FQA7N80 N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been specially tailored to reduce on-state resistance and provide superior switching performance and high avalanche energy strength.
FQA46N15 Features
50A, 150V
RDS(on) = 42mΩ(Max.) @VGS = 10 V, ID = 25A
Low Gate Charge ( Typ. 85nC)
Low Crss ( Typ. 100pF)
100% Avalanche Tested
175°C Maximum Junction Temperature Rating
FQA46N15 Applications
Other Audio & Video
Switched Mode Power Supplies
Audio Amplifiers
DC Motor Control
Variable Switching Power Applications
