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ContactFQA140N10
MOSFET (Metal Oxide) N-Channel Tube 10m Ω @ 70A, 10V ±25V 7900pF @ 25V 285nC @ 10V TO-3P-3, SC-65-3
- Manufacturer: ON Semiconductor
- NO: 598-FQA140N10
- Package: TO-3P-3, SC-65-3
- Datasheet:
- Stock: 6184
- Description: MOSFET (Metal Oxide) N-Channel Tube 10m Ω @ 70A, 10V ±25V 7900pF @ 25V 285nC @ 10V TO-3P-3, SC-65-3 (Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 9 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 6 days ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-3P-3, SC-65-3 |
| Number of Pins | 3 |
| Weight | 6.401g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2013 |
| Series | QFET® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Resistance | 10mOhm |
| Terminal Finish | Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 100V |
| Technology | MOSFET (Metal Oxide) |
| Current Rating | 140A |
| Number of Elements | 1 |
| Power Dissipation-Max | 375W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 375W |
| Turn On Delay Time | 75 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 10m Ω @ 70A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 7900pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 140A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 285nC @ 10V |
| Rise Time | 940ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Fall Time (Typ) | 360 ns |
| Turn-Off Delay Time | 350 ns |
| Continuous Drain Current (ID) | 140A |
| Threshold Voltage | 4V |
| Gate to Source Voltage (Vgs) | 25V |
| Drain to Source Breakdown Voltage | 100V |
| Pulsed Drain Current-Max (IDM) | 560A |
| Height | 18.9mm |
| Length | 15.8mm |
| Width | 5mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
FQA140N10 Description
This N-channel enhanced downlink MOSFET FQA140N10 is produced using Fairchild's proprietary planar stripes and DMOS technology. This advanced MOSFET technology is tailored to reduce on-resistance and provides excellent switching performance and high avalanche energy intensity. These devices are suitable for switching mode power supplies, audio amplifiers, DC motor control and variable switching power applications.
FQA140N10 Applications
switching mode power supplies
audio amplifiers
DC motor control
variable switching power
FQA140N10 Features
140A,100 V,Rps(on)=10mΩ(Max.) @VGs=10 V, ID=70A
Low Gate Charge(Typ.220nC)
Low Crss(Typ.470pF)
100%Avalanche Tested
175℃ Maximum Junction Temperature Rating
