FQA13N80-F109

MOSFET (Metal Oxide) N-Channel Tube 750m Ω @ 6.3A, 10V ±30V 3500pF @ 25V 88nC @ 10V TO-3P-3, SC-65-3


  • Manufacturer: ON Semiconductor
  • NO: 598-FQA13N80-F109
  • Package: TO-3P-3, SC-65-3
  • Datasheet: pdf
  • Stock: 6922
  • Description: MOSFET (Metal Oxide) N-Channel Tube 750m Ω @ 6.3A, 10V ±30V 3500pF @ 25V 88nC @ 10V TO-3P-3, SC-65-3 (Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 18 hours ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3
Weight 6.401g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2007
Series QFET®
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 300W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 300W
Turn On Delay Time 60 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 750m Ω @ 6.3A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3500pF @ 25V
Current - Continuous Drain (Id) @ 25°C 12.6A Tc
Gate Charge (Qg) (Max) @ Vgs 88nC @ 10V
Rise Time 150ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 110 ns
Turn-Off Delay Time 155 ns
Continuous Drain Current (ID) 12.6A
Threshold Voltage 5V
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.75Ohm
Drain to Source Breakdown Voltage 800V
Pulsed Drain Current-Max (IDM) 50.4A
Height 18.9mm
Length 15.8mm
Width 5mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

FQA13N80-F109 Overview


The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 3500pF @ 25V.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 12.6A amps.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=800V, and this device has a drain-to-source breakdown voltage of 800V voltage.Its turn-off delay time is 155 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Peak drain current is 50.4A, which is the maximum pulsed drain current.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 60 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 5V.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

FQA13N80-F109 Features


a continuous drain current (ID) of 12.6A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 155 ns
based on its rated peak drain current 50.4A.
a threshold voltage of 5V

FQA13N80-F109 Applications


There are a lot of ON Semiconductor FQA13N80-F109 applications of single MOSFETs transistors.

  • Micro Solar Inverter
  • Lighting, Server, Telecom and UPS.
  • Power Management Functions
  • Motor drives and Uninterruptible Power Supplies
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Server power supplies
  • LCD/LED TV
  • Lighting
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,

In Stock

Please send RFQ , we will respond immediately.