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The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Factory Lead Time | 10 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
| Contact Plating | Copper, Silver, Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 4-XFBGA, WLCSP |
| Number of Pins | 4 |
| Weight | 68.4mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | PowerTrench® |
| JESD-609 Code | e1 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
| Subcategory | Other Transistors |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | BOTTOM |
| Terminal Form | BALL |
| Number of Elements | 1 |
| Power Dissipation-Max | 1.7W Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.7W |
| Turn On Delay Time | 5.9 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 75m Ω @ 2A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1000pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 3.7A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 17nC @ 4.5V |
| Rise Time | 9.1ns |
| Drain to Source Voltage (Vdss) | 20V |
| Drive Voltage (Max Rds On,Min Rds On) | 1.5V 4.5V |
| Vgs (Max) | ±8V |
| Fall Time (Typ) | 88 ns |
| Turn-Off Delay Time | 124 ns |
| Continuous Drain Current (ID) | -3.7A |
| Threshold Voltage | -600mV |
| Gate to Source Voltage (Vgs) | 8V |
| Drain-source On Resistance-Max | 0.075Ohm |
| Drain to Source Breakdown Voltage | -20V |
| Height | 400μm |
| Length | 1mm |
| Width | 1mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
FDZ371PZ is a 1.5v P-Channel Specified PowerTrench? Thin WL-CSP MOSFET. Designed on an advanced 1.5 V PowerTrench? process with state of a art "fine pitch" Thin WLCSP packaging process, the FDZ371PZ minimizes both PCB space and rDS(on). This advanced WLCSP MOSFET FDZ371PZ embodies a breakthrough in packaging technology that enables the device to combine excellent thermal transfer characteristics, ultra-low profile packaging, low gate charge, and low rDS(on).
Max rDS(on) = 75 mΩ at VGS = -4.5 V, ID = -2.0 A
Max rDS(on) = 90 mΩ at VGS = -2.5 V, ID = -1.5 A
Max rDS(on) = 110 mΩ at VGS = -1.8 V, ID = -1.0 A
Max rDS(on) = 150 mΩ at VGS = -1.5 V, ID = -1.0 A
Occupies only 1.0 mm2 of PCB area. Less than 30% of the area of 2 x 2 BGA
Ultra-thin package: less than 0.4 mm in height when mounted to PCB
Battery Management
Load Switch
Battery Protection
Hybrid electric vehicles
On-board battery charger
Power supplies
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