Products
Manufacturer
RFQ
NEWS
ContactFDV304P
FDV304P datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDV304P
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 647
- Description: FDV304P datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
- Delivery:
- Payment:
In Stock
Please send RFQ , we will respond immediately.
.png)
.png)
.png)
.png)
.png)
.png)
.png)
.png)
.png)
You may place an order without registering to Chip Smart.
We strongly suggest you sign in before purchasing as you
can track your order in real time.
For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.
RFQ (Request for Quotations)It is recommended to request for quotations to get the latest
prices and inventories about the part.
Our sales will reply to
your request by email within 24 hours.
1. You'll receive an order information email in your inbox.
(Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some
extent, the sales manager is going to reconfirm the order and let you know if there
are any updates.
Shipping starts at $40, but some countries will exceed $40. For
example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time
zone and country.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Factory Lead Time | 10 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 17 hours ago) |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 1997 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Termination | SMD/SMT |
| ECCN Code | EAR99 |
| Resistance | 1.5Ohm |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -25V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | -460mA |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Voltage | 25V |
| Power Dissipation-Max | 350mW Ta |
| Element Configuration | Single |
| Current | 46A |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 350mW |
| Turn On Delay Time | 7 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 1.1 Ω @ 500mA, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 63pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 460mA Ta |
| Gate Charge (Qg) (Max) @ Vgs | 1.5nC @ 4.5V |
| Rise Time | 8ns |
| Drive Voltage (Max Rds On,Min Rds On) | 2.7V 4.5V |
| Vgs (Max) | ±8V |
| Fall Time (Typ) | 8 ns |
| Turn-Off Delay Time | 55 ns |
| Continuous Drain Current (ID) | 460mA |
| Threshold Voltage | -860mV |
| Gate to Source Voltage (Vgs) | -8V |
| Drain to Source Breakdown Voltage | -25V |
| Dual Supply Voltage | -25V |
| Max Junction Temperature (Tj) | 150°C |
| Nominal Vgs | -860 mV |
| Height | 1.11mm |
| Length | 2.92mm |
| Width | 1.3mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
FDV304P Description
This P-Channel enhancement mode field effect transistors is produced using ON Semiconductor's proprietary, high cell
density, DMOS technology. This very high density process is tailored to minimize on-state resistance at low gate drive
conditions. This device is designed especially for application in battery power applications such as notebook computers
and cellular phones. This device has excellent on-state resistance even at gate drive voltages as low as 2.5 volts.
FDV304P Features
-25 V, -0.46 A continuous, -1.5 A Peak.
RDS(ON) = 1.1 W @ VGS = -4.5 V
RDS(ON) = 1.5 W @ VGS= -2.7 V.
Very low level gate drive requirements allowing direct
operation in 3V circuits. VGS(th) < 1.5V.
Gate-Source Zener for ESD ruggedness.
>6kV Human Body Model
Compact industry standard SOT-23 surface mount
package.
