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ContactFDT459N
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 35m Ω @ 6.5A, 10V ±20V 365pF @ 15V 17nC @ 10V TO-261-4, TO-261AA
- Manufacturer: ON Semiconductor
- NO: 598-FDT459N
- Package: TO-261-4, TO-261AA
- Datasheet:
- Stock: 8777
- Description: MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 35m Ω @ 6.5A, 10V ±20V 365pF @ 15V 17nC @ 10V TO-261-4, TO-261AA (Kg)
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| Parameters | |
|---|---|
| Lifecycle Status | LIFETIME (Last Updated: 11 hours ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Number of Pins | 3 |
| Weight | 250.2mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 1998 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Last Time Buy |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 30V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Current Rating | 6.5A |
| JESD-30 Code | R-PDSO-G4 |
| Number of Elements | 1 |
| Power Dissipation-Max | 3W Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 3W |
| Case Connection | DRAIN |
| Turn On Delay Time | 5.2 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 35m Ω @ 6.5A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 365pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 6.5A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 17nC @ 10V |
| Rise Time | 8.2ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 16 ns |
| Turn-Off Delay Time | 6 ns |
| Continuous Drain Current (ID) | 6.5A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 30V |
| Pulsed Drain Current-Max (IDM) | 20A |
| Height | 1.7mm |
| Length | 6.7mm |
| Width | 3.7mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
FDT459N Description
FDT459N belongs to the family of N-channel enhancement-mode field-effect transistors manufactured by ON Semiconductor based on the proprietary, high cell density, DMOS technology for low on-state resistance and advanced switching performance. Based on its high quality and reliable performance, it is well suited for low-voltage, low-current applications.
FDT459N Features
Low gate charge
Low on-state resistance
Improved dv/dt capability
Advanced switching performance
Available in the SOT-223 package
FDT459N Applications
DC motor control
Power management
Battery-powered circuits
