Products
Manufacturer
RFQ
NEWS
ContactFDT457N
FDT457N datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDT457N
- Package: TO-261-4, TO-261AA
- Datasheet:
- Stock: 9232
- Description: FDT457N datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
- Delivery:
- Payment:
In Stock
Please send RFQ , we will respond immediately.
.png)
.png)
.png)
.png)
.png)
.png)
.png)
.png)
.png)
You may place an order without registering to Chip Smart.
We strongly suggest you sign in before purchasing as you
can track your order in real time.
For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.
RFQ (Request for Quotations)It is recommended to request for quotations to get the latest
prices and inventories about the part.
Our sales will reply to
your request by email within 24 hours.
1. You'll receive an order information email in your inbox.
(Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some
extent, the sales manager is going to reconfirm the order and let you know if there
are any updates.
Shipping starts at $40, but some countries will exceed $40. For
example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time
zone and country.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 5A |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 3W Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 3W |
| Case Connection | DRAIN |
| Turn On Delay Time | 5 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 60m Ω @ 5A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 235pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 5A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 5.9nC @ 5V |
| Rise Time | 12ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 3 ns |
| Turn-Off Delay Time | 12 ns |
| Continuous Drain Current (ID) | 5A |
| Threshold Voltage | 1.6V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 5A |
| Drain to Source Breakdown Voltage | 30V |
| Max Junction Temperature (Tj) | 150°C |
| Height | 1.8mm |
| Length | 6.5mm |
| Width | 3.56mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 18 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 10 hours ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Number of Pins | 4 |
| Weight | 250.2mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2017 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Resistance | 60mOhm |
| Terminal Finish | TIN |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 30V |
| Technology | MOSFET (Metal Oxide) |
FDT457N Description
ON Semiconductor's FDT457N is an enhancement mode power field effect transistor with N channels. It comes in TO-261-4 and TO-261AA package options. ON Semiconductor's unique high cell density DMOS technology is used to make these N-Channel enhancement mode power field-effect transistors. This ultra-high-density method is designed to reduce on-state resistance and improve switching performance. Low voltage, low current applications such as laptop computer power management, battery-driven circuits, and DC motor control are well suited to these devices.
FDT457N Features
High-density cell design for extremely low RDS(ON).
High power and current handling capability in a widely used surface mount package.
FDT457N Applications
Notebook computer power management
Battery-powered circuits
DC motor control
