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FDT439N datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDT439N
- Package: TO-261-4, TO-261AA
- Datasheet:
- Stock: 7330
- Description: FDT439N datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 18 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 10 hours ago) |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Number of Pins | 4 |
| Weight | 250.2mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 1999 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| Termination | SMD/SMT |
| ECCN Code | EAR99 |
| Resistance | 45mOhm |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 30V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Current Rating | 6.3A |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 3W Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 3W |
| Case Connection | DRAIN |
| Turn On Delay Time | 6 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 45m Ω @ 6.3A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 500pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 6.3A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 15nC @ 4.5V |
| Rise Time | 10ns |
| Drive Voltage (Max Rds On,Min Rds On) | 2.5V 4.5V |
| Vgs (Max) | ±8V |
| Fall Time (Typ) | 10 ns |
| Turn-Off Delay Time | 30 ns |
| Continuous Drain Current (ID) | 6.3A |
| Threshold Voltage | 670mV |
| Gate to Source Voltage (Vgs) | 8V |
| Drain to Source Breakdown Voltage | 30V |
| Pulsed Drain Current-Max (IDM) | 20A |
| Dual Supply Voltage | 30V |
| Max Junction Temperature (Tj) | 150°C |
| Nominal Vgs | 670 mV |
| Height | 1.8mm |
| Length | 6.5mm |
| Width | 3.56mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
FDT439N Description
Onsemi's patented, high cell density, DMOS technology is used to make the FDT439N channel enhancement mode power field-effect transistor. This extremely high-density technique has been specifically designed to reduce on-state resistance and improve switching performance. The FDT439N is ideal for low voltage, low current applications such as laptop computer power management, battery-powered circuits, and DC motor control.
FDT439N Features
Fast switching speed.
This Device is Pb?Free
6.3 A, 30 V
RDS(on) = 0.045 @ VGS = 4.5 V
RDS(on) = 0.058 @ VGS = 2.5 V
High power and current handling capability in a widely used surface mount package.
FDT439N Applications
Load Switch
Motor Driving
DC/DC Converter
