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FDS86242 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDS86242
- Package: 8-SOIC (0.154, 3.90mm Width)
- Datasheet:
- Stock: 3550
- Description: FDS86242 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 9 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Weight | 130mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2008 |
| Series | PowerTrench® |
| JESD-609 Code | e4 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 2.5W Ta 5W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2.5W |
| Turn On Delay Time | 7.9 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 67m Ω @ 4.1A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 760pF @ 75V |
| Current - Continuous Drain (Id) @ 25°C | 4.1A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 13nC @ 10V |
| Rise Time | 10ns |
| Drive Voltage (Max Rds On,Min Rds On) | 6V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 10 ns |
| Turn-Off Delay Time | 13 ns |
| Continuous Drain Current (ID) | 4.1A |
| Threshold Voltage | 2V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain-source On Resistance-Max | 0.067Ohm |
| Drain to Source Breakdown Voltage | 150V |
| Max Junction Temperature (Tj) | 150°C |
| Nominal Vgs | 3.5 V |
| Feedback Cap-Max (Crss) | 5 pF |
| Height | 1.75mm |
| Length | 4mm |
| Width | 5mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
FDS86242 Description
This N-Channel MOSFET is produced using an advanced Power Trench? process that has been optimized for rDS(on), switching performance, and ruggedness.
FDS86242 Features
Max rDS(on) = 67 m|? at VGS = 10 V, ID = 4.1 A
Max rDS(on) = 98m|? at VGS = 6 V, ID = 3.3 A
High-performance trench technology for extremely low RDS(on)
High power and current handling capability in a widely used surface mount package
100% UIL Tested
RoHS Compliant
FDS86242 Applications
This product is general usage and suitable for many different applications.
DC/DC Converters
Off-line UPS
Distributed Power Architectures and VRMs
Primary Switch for 24V and 48V Systems
High Voltage Synchronous Rectifier
