Products
Manufacturer
RFQ
NEWS
ContactFDS6680AS
FDS6680AS datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDS6680AS
- Package: 8-SOIC (0.154, 3.90mm Width)
- Datasheet:
- Stock: 7293
- Description: FDS6680AS datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
- Delivery:
- Payment:
In Stock
Please send RFQ , we will respond immediately.
.png)
.png)
.png)
.png)
.png)
.png)
.png)
.png)
.png)
You may place an order without registering to Chip Smart.
We strongly suggest you sign in before purchasing as you
can track your order in real time.
For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.
RFQ (Request for Quotations)It is recommended to request for quotations to get the latest
prices and inventories about the part.
Our sales will reply to
your request by email within 24 hours.
1. You'll receive an order information email in your inbox.
(Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some
extent, the sales manager is going to reconfirm the order and let you know if there
are any updates.
Shipping starts at $40, but some countries will exceed $40. For
example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time
zone and country.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Factory Lead Time | 18 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Weight | 130mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2005 |
| Series | PowerTrench®, SyncFET™ |
| JESD-609 Code | e4 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Resistance | 10MOhm |
| Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | -30V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Current Rating | -11.5A |
| Number of Elements | 1 |
| Power Dissipation-Max | 2.5W Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2.5mW |
| Turn On Delay Time | 11 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 10m Ω @ 11.5A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 1240pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 11.5A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V |
| Rise Time | 12ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 11 ns |
| Turn-Off Delay Time | 18 ns |
| Continuous Drain Current (ID) | 11.5A |
| Threshold Voltage | 1.5V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 30V |
| Recovery Time | 18 ns |
| Height | 1.5mm |
| Length | 5mm |
| Width | 4mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
FDS6680AS Description
The FDS6680AS is a 30V N-channel PowerTrench? SyncFET having been specially tailored to minimize the on-state resistance and maintain a low gate charge for superior switching performance. The latest medium voltage power MOSFET FDS6680AS is optimized power switches combining small gate charge (QG), small reverse recovery charge (Qrr), and soft reverse recovery body diode, which contributes to fast switching for synchronous rectification in AC/DC power supplies. It employs a shielded-gate structure that provides a charge balance. The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the low-side switch (Q2) is optimized to reduce conduction losses. Q2 also includes an integrated Schottky diode using monolithic SyncFET technology. This product is general usage and suitable for many different applications.
FDS6680AS Features
11.5A, 30V
RDS(ON) = 8.0 mΩ @ VGS = 10V
RDS(ON) = 10.5 mΩ @ VGS = 4.5V
Includes SyncFET Schottky body diode
Low gate charge (22nC typical)
High-performance trench technology for extremely low RDS(ON) and fast switching
High power and current handling capability
FDS6680AS Applications
DC/DC Converters
Low Side Notebook
Cellular phones
Laptop computers
Photovoltaic systems
