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FDS6670AS datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDS6670AS
- Package: 8-SOIC (0.154, 3.90mm Width)
- Datasheet:
- Stock: 9787
- Description: FDS6670AS datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 18 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Weight | 130mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2005 |
| Series | PowerTrench®, SyncFET™ |
| JESD-609 Code | e4 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Resistance | 9MOhm |
| Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) |
| Voltage - Rated DC | 30V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Current Rating | 13.5A |
| Number of Elements | 1 |
| Power Dissipation-Max | 2.5W Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2.5W |
| Turn On Delay Time | 10 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 9m Ω @ 13.5A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 1540pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 13.5A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 38nC @ 10V |
| Rise Time | 5ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 18 ns |
| Turn-Off Delay Time | 27 ns |
| Continuous Drain Current (ID) | 13.5A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 30V |
| Height | 1.5mm |
| Length | 5mm |
| Width | 4mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
FDS6670AS Description
The FDS6670AS from ON Semiconductor is intended to replace a single SO-8 MOSFET and Schottky diode in a synchronous DC: DC power supply. This 30V MOSFET is intended to maximize power conversion efficiency by having a low RDS(ON) and gate charge. Using ON Semiconductor's monolithic SyncFET technology, the FDS6670AS has an inbuilt Schottky diode.
FDS6670AS Features
Includes SyncFET Schottky body diode
Low gate charge (27nC typical)
High-performance trench technology for extremely low RDS(ON) and fast switching
High power and current handling capability
13.5A, 30V
RDS(on) = 9.0mΩ @ VGS = 10V
RDS(on) = 11.5mΩ @ VGS = 4.5V
RoHS Compliant
FDS6670AS Applications
DC/DC Converters
Low Side Notebook
