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FDS6612A
  • FDS6612A

FDS6612A

FDS6612A datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • NO: 598-FDS6612A
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: pdf
  • Stock: 7294
  • Description: FDS6612A datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 18 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 130mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench®
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
Termination SMD/SMT
ECCN Code EAR99
Resistance 22MOhm
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Additional Feature LOGIC LEVEL COMPATIBLE
Subcategory FET General Purpose Power
Voltage - Rated DC 30V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Current Rating 8.4A
Number of Elements 1
Power Dissipation-Max 2.5W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Turn On Delay Time 7 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 22m Ω @ 8.4A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 560pF @ 15V
Current - Continuous Drain (Id) @ 25°C 8.4A Ta
Gate Charge (Qg) (Max) @ Vgs 7.6nC @ 5V
Rise Time 5ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 3 ns
Turn-Off Delay Time 22 ns
Continuous Drain Current (ID) 8.4A
Threshold Voltage 1.9V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Dual Supply Voltage 30V
Nominal Vgs 1.9 V
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

FDS6612A MOSFET Description


FDS6612A is an N-Channel MOSFET adopting Onsemi's PowerTrench technology to enhance its low on-resistance performance and the overall switching characteristics. It is capable of switching small to medium loads. Its Drain-Source voltage is 30 V and is able to work over -55~150 ℃.



FDS6612A MOSFET Features


  • Low gate charge

  • 8.4 A, 30 V

  • RDS(ON) = 22 mΩ @ VGS = 10 V

  • Fast switching speed

  • RDS(ON) = 30 mΩ @ VGS = 4.5 V

  • High-performance trench technology for extremely low RDS(ON)

  • High power and current handling capability



FDS6612A MOSFET Applications


  • Automotive

  • Consumer

  • DC-DC

  • AC/DC power supplies

  • Telecom 

  • Buck-boost converters

  • UPS

  • eMobility

  • Onboard charger

  • Motor control


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