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FDPF3N50NZ
  • FDPF3N50NZ

FDPF3N50NZ

FDPF3N50NZ datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • NO: 598-FDPF3N50NZ
  • Package: TO-220-3 Full Pack
  • Datasheet: pdf
  • Stock: 924
  • Description: FDPF3N50NZ datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Weight 2.27g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2010
Series UniFET-II™
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 27W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 27W
Case Connection ISOLATED
Turn On Delay Time 10 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.5 Ω @ 1.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 280pF @ 25V
Current - Continuous Drain (Id) @ 25°C 3A Tc
Gate Charge (Qg) (Max) @ Vgs 9nC @ 10V
Rise Time 15ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Fall Time (Typ) 17 ns
Turn-Off Delay Time 26 ns
Continuous Drain Current (ID) 3A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 25V
Drain Current-Max (Abs) (ID) 3A
Drain to Source Breakdown Voltage 500V
Height 15.87mm
Length 10.16mm
Width 4.7mm
Radiation Hardening No
RoHS Status ROHS3 Compliant

FDPF3N50NZ Description


A high voltage MOSFET family called UniFETTM II is based on cutting-edge planar stripe and DMOS technology. This cutting-edge MOSFET series offers greater switching performance, higher avalanche energy strength, and the lowest on-state resistance among planar MOSFET. Additionally, the UniFET II MOSFET can endure over 2kV HBM surge stress thanks to an integrated gate-source ESD diode. For switching power converter applications such power factor correction (PFC), flat panel display (FPD) TV power, ATX, and electronic lamp ballasts, this device family is appropriate.



FDPF3N50NZ Features


  • RDS(on) = 2.1? ( Typ.)@ VGS = 10V, ID = 1.5A

  • Low gate charge ( Typ. 6.2nC)

  • Low Crss ( Typ. 2.5pF)

  • 100% avalanche tested

  • Improved dv/dt capability

  • ESD improved capability

  • RoHS compliant



FDPF3N50NZ Applications


  • This product is general usage and suitable for many different applications.

  • LCD / LED / PDP TV

  • Lighting

  • Uninterruptible Power Supplies

  • AC-DC Power Supplies


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