FDP55N06

FDP55N06 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • NO: 598-FDP55N06
  • Package: TO-220-3
  • Datasheet: pdf
  • Stock: 6617
  • Description: FDP55N06 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 22m Ω @ 27.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1510pF @ 25V
Current - Continuous Drain (Id) @ 25°C 55A Tc
Gate Charge (Qg) (Max) @ Vgs 37nC @ 10V
Rise Time 130ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Fall Time (Typ) 95 ns
Turn-Off Delay Time 70 ns
Continuous Drain Current (ID) 55A
Threshold Voltage 2V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 25V
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 220A
Avalanche Energy Rating (Eas) 480 mJ
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 5 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 1.8g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2013
Series UniFET™
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 22mOhm
Terminal Finish Tin (Sn)
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 114W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 114W
Turn On Delay Time 30 ns
FET Type N-Channel

FDP55N06 Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 480 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1510pF @ 25V.This device has a continuous drain current (ID) of [55A], which is its maximum continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=60V, and this device has a drain-to-source breakdown voltage of 60V voltage.Turn-Off delay time?is?the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 70 ns.There is a peak drain current of 220A, its maximum pulsed drain current.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 30 ns seconds.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 25V volts.2V is the threshold voltage at which an electrical device activates any of its operations.Using drive voltage (10V) reduces this device's overall power consumption.

FDP55N06 Features


the avalanche energy rating (Eas) is 480 mJ
a continuous drain current (ID) of 55A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 70 ns
based on its rated peak drain current 220A.
a threshold voltage of 2V

FDP55N06 Applications


There are a lot of ON Semiconductor FDP55N06 applications of single MOSFETs transistors.

  • LCD/LED/ PDP TV Lighting
  • Consumer Appliances
  • AC-DC Power Supply
  • LCD/LED TV
  • Lighting
  • Battery Protection Circuit
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Power Management Functions
  • DC/DC converters
  • Power Tools

In Stock

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