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FDP39N20 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDP39N20
- Package: TO-220-3
- Datasheet:
- Stock: 1035
- Description: FDP39N20 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Turn-Off Delay Time | 150 ns |
| Continuous Drain Current (ID) | 39A |
| JEDEC-95 Code | TO-220AB |
| Gate to Source Voltage (Vgs) | 30V |
| Drain-source On Resistance-Max | 0.066Ohm |
| Drain to Source Breakdown Voltage | 200V |
| Avalanche Energy Rating (Eas) | 860 mJ |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 4 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Weight | 1.8g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Series | UniFET™ |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Additional Feature | FAST SWITCHING |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| JESD-30 Code | R-PSFM-T3 |
| Number of Elements | 1 |
| Power Dissipation-Max | 251W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 251W |
| Turn On Delay Time | 30 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 66m Ω @ 19.5A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 2130pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 39A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 49nC @ 10V |
| Rise Time | 160ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Fall Time (Typ) | 150 ns |
FDP39N20 Description
A high voltage MOSFET family called UniFETTM MOSFET is based on DMOS and planar stripe technology. The FDP39N20 MOSFET is designed to offer superior switching performance, increased avalanche energy strength, and reduced on-state resistance. Switching power converter applications such power factor correction (PFC), flat panel display (FPD) TV power, ATX, and electronic lamp ballasts are appropriate for the FDP39N20.
FDP39N20 Features
Low Crss (Typ. 57 pF)
100% Avalanche Tested
Low Gate Charge (Typ. 38 nC)
RDS(on) = 66 mΩ (Max.) @ VGS = 10 V, ID = 19.5 A
FDP39N20 Applications
PDP TV
Lighting
AC-DC Power Supplies
Uninterruptible Power Supplies
