FDP18N50

FDP18N50 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • NO: 598-FDP18N50
  • Package: TO-220-3
  • Datasheet: pdf
  • Stock: 3693
  • Description: FDP18N50 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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SPECIFICATIONS

Parameters
Radiation Hardening No
Number of Pins 3
Additional Feature FAST SWITCHING
Package / Case TO-220-3
REACH SVHC No SVHC
Height 9.4mm
Width 4.7mm
Resistance 265MOhm
Mounting Type Through Hole
Operating Temperature -55°C~150°C TJ
Voltage - Rated DC 500V
Technology MOSFET (Metal Oxide)
Operating Mode ENHANCEMENT MODE
Current 18A
JESD-609 Code e3
Subcategory FET General Purpose Power
Voltage 500V
Number of Elements 1
JEDEC-95 Code TO-220AB
Element Configuration Single
Power Dissipation 235W
Turn On Delay Time 55 ns
Threshold Voltage 5V
Power Dissipation-Max 235W Tc
Continuous Drain Current (ID) 18A
Transistor Application SWITCHING
Turn-Off Delay Time 95 ns
Transistor Element Material SILICON
FET Type N-Channel
Rds On (Max) @ Id, Vgs 265m Ω @ 9A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2860pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 60nC @ 10V
Rise Time 165ns
Fall Time (Typ) 90 ns
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 500V
Current - Continuous Drain (Id) @ 25°C 18A Tc
Avalanche Energy Rating (Eas) 945 mJ
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Factory Lead Time 9 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mount Through Hole
Packaging Tube
Published 2013
Series UniFET™
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Length 10.1mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Contact Plating Tin
Current Rating 18A
See Relate Datesheet

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