FDP038AN06A0

FDP038AN06A0 Overview

As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 625 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 6400pF @ 25V.This device conducts a continuous drain current (ID) of 80A, which is the maximum continuous current transistor can conduct.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=60V, the drain-source breakdown voltage is 60V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 34 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 17 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.This transistor's threshold voltage is 4V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.This device uses no drive voltage (6V 10V) to reduce its overall power consumption.

FDP038AN06A0 Features

the avalanche energy rating (Eas) is 625 mJ
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 34 ns
a threshold voltage of 4V

FDP038AN06A0 Applications

There are a lot of ON Semiconductor FDP038AN06A0 applications of single MOSFETs transistors.

• Micro Solar Inverter
• Motor Drives and Uninterruptible Power Supples
• LCD/LED/ PDP TV Lighting
• Uninterruptible Power Supply
• DC/DC converters
• DC-to-DC converters
• Server power supplies
• Battery Protection Circuit
• Consumer Appliances
• Telecom 1 Sever Power Supplies