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ContactFDP025N06
FDP025N06 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDP025N06
- Package: TO-220-3
- Datasheet:
- Stock: 8017
- Description: FDP025N06 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 9 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Number of Pins | 3 |
| Weight | 2.421g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2013 |
| Series | PowerTrench® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Resistance | 2.5MOhm |
| Terminal Finish | Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Number of Elements | 1 |
| Power Dissipation-Max | 395W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 395W |
| Turn On Delay Time | 134 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 2.5m Ω @ 75A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 14885pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 120A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 226nC @ 10V |
| Rise Time | 324ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 250 ns |
| Turn-Off Delay Time | 348 ns |
| Continuous Drain Current (ID) | 265A |
| Threshold Voltage | 3.5V |
| JEDEC-95 Code | TO-220AB |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 60V |
| Nominal Vgs | 3.5 V |
| Height | 15.7mm |
| Length | 9.9mm |
| Width | 4.5mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
FDP025N06 Description
This N-Channel MOSFET FDP025N06 is produced using Fairchild Semicon- ductor's advanced Power Trench process that has been tai lored to minimize the on-state resistance while maintaining superior switching perfomance.
FDP025N06 Features
·RDS(on)=1.9mΩ(Typ.)@VGs=10V，lD=75A
·Fast Switching Speed
·Low Gate Charge
·High Performance Trench Technologyfor ExtremelyLow RpS(on)
·High Power and Current Handling Capability·RoHS Compliant
FDP025N06 Applications
·Synchronous RectificationforATX/Server/Telecom PSU
·Battery Protection Circuit
·Motor Drives and Uninterruptible Power Supplies
·Renewable system
