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| Parameters | |
|---|---|
| Rds On (Max) @ Id, Vgs | 1.2 Ω @ 800mA, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 210pF @ 75V |
| Gate Charge (Qg) (Max) @ Vgs | 4.1nC @ 10V |
| Rise Time | 2.2ns |
| Fall Time (Typ) | 9.9 ns |
| Gate to Source Voltage (Vgs) | 25V |
| Drain Current-Max (Abs) (ID) | 0.8A |
| Current - Continuous Drain (Id) @ 25°C | 800mA Ta |
| Drain to Source Voltage (Vdss) | 150V |
| Feedback Cap-Max (Crss) | 5 pF |
| Drive Voltage (Max Rds On,Min Rds On) | 6V 10V |
| Vgs (Max) | ±25V |
| Factory Lead Time | 8 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
| Mount | Surface Mount |
| Packaging | Tape & Reel (TR) |
| Published | 2017 |
| Series | PowerTrench® |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Length | 2.92mm |
| RoHS Status | ROHS3 Compliant |
| Number of Pins | 3 |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Height | 940μm |
| Width | 1.4mm |
| Mounting Type | Surface Mount |
| Weight | 30mg |
| Operating Temperature | -55°C~150°C TJ |
| Technology | MOSFET (Metal Oxide) |
| Operating Mode | ENHANCEMENT MODE |
| JESD-609 Code | e3 |
| Terminal Finish | Tin (Sn) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Number of Channels | 1 |
| Subcategory | Other Transistors |
| Number of Elements | 1 |
| Element Configuration | Single |
| Turn On Delay Time | 5.7 ns |
| Power Dissipation-Max | 1.5W Ta |
| Continuous Drain Current (ID) | 800mA |
| Transistor Application | SWITCHING |
| Turn-Off Delay Time | 7.9 ns |
| Transistor Element Material | SILICON |
| FET Type | P-Channel |
Product Description:
The FDN86265P is a small-sized, high-performance Power MOSFET designed to provide efficient power switching and amplification capabilities in various electronic applications. With its compact form factor and excellent electrical characteristics, this MOSFET is suitable for applications requiring low power loss and reliable switching.
Features:
Low On-Resistance: The FDN86265P features a low on-resistance, which leads to reduced power loss and efficient power management.
Compact Size: With its small footprint and lightweight design, the FDN86265P is ideal for space-constrained applications.
High Current Handling: This Power MOSFET can handle moderate to high currents, making it suitable for a variety of power management tasks.
Low Gate Threshold Voltage: The low gate threshold voltage ensures that the MOSFET can be easily controlled by low-voltage logic signals.
TO-252 Package: The TO-252 (DPAK) package provides thermal efficiency and ease of installation on circuit boards.
Fast Switching Speed: The MOSFET offers fast switching characteristics, allowing for efficient power management and reduced switching losses.
Applications:
The FDN86265P Power MOSFET finds applications in a wide range of electronic systems, including:
Power Management: It's commonly used in power management circuits for voltage regulation and switching applications.
DC-DC Converters: The MOSFET is employed in DC-DC converter circuits to efficiently step up or step down voltage levels.
Motor Control: It's utilized in motor control circuits to switch and regulate current flow in electric motors.
LED Drivers: The FDN86265P can be used to drive LEDs in lighting applications, ensuring efficient power control.
Battery Management: It's used in battery management systems to control charging and discharging currents.
Switching Circuits: The MOSFET is suitable for various switching applications where efficient power handling is required.
In summary, the FDN86265P Power MOSFET is a versatile component that offers efficient power switching and amplification capabilities. Whether you're working on power management, motor control, LED drivers, or other applications, this MOSFET's low on-resistance, compact size, and fast switching speed contribute to improved overall system performance and reliability.
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