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ContactFDN5630
FDN5630 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDN5630
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 1257
- Description: FDN5630 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2000 |
| Series | PowerTrench® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Termination | SMD/SMT |
| ECCN Code | EAR99 |
| Resistance | 100mOhm |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 60V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Current Rating | 1.7A |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Voltage | 60V |
| Power Dissipation-Max | 500mW Ta |
| Element Configuration | Single |
| Current | 17A |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 500mW |
| Turn On Delay Time | 10 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 100m Ω @ 1.7A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 400pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 1.7A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 10nC @ 10V |
| Rise Time | 6ns |
| Drive Voltage (Max Rds On,Min Rds On) | 6V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 6 ns |
| Turn-Off Delay Time | 15 ns |
| Continuous Drain Current (ID) | 1.7A |
| Threshold Voltage | 1V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 60V |
| Dual Supply Voltage | 60V |
| Max Junction Temperature (Tj) | 150°C |
| Nominal Vgs | 2.4 V |
| Min Breakdown Voltage | 60V |
| Height | 1.22mm |
| Length | 2.92mm |
| Width | 1.4mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 8 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 17 hours ago) |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Number of Pins | 3 |
Description
Explicitly designed to reduce on-state resistance and maintain a low gate charge for the best switching performance, the FDN5630 is a 60V N-channel PowerTrench? MOSFET. The newest medium voltage power MOSFET is an optimized power switch that combines a soft reverse recovery body diode, a small reverse recovery charge, and a small gate charge to provide quick switching for synchronous rectification in AC/DC power supply. It makes use of shielded-gate technology to maintain charge balance. These devices' FOM (figure of merit (QGxRDS(ON))) is 66 percent lower than that of earlier generations thanks to the use of this cutting-edge technology. Because it may reduce the unfavorable voltage spikes in synchronous rectification, the soft body diode performance of the new PowerTrench? MOSFET eliminates snubber circuits or replaces higher voltage ratings - MOSFET requires circuits. This product is all-purpose and appropriate for a wide range of uses.
Features
Low gate charge
High-speed switching
SuperSOTTM - 3 provides low RDS(ON) in SOT23 footprint
1.7 A, 60 V. RDS(ON) = 0.100 ? @ VGS = 10 V
RDS(ON) = 0.120 ? @ VGS = 6 V
Optimized for use in high frequency DC/DC converters
Applications
DC/DC converter
Motor drives
Automotive electronics
As switching devices in electronic control units
As power converters in modern electric vehicles
