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FDMT80060DC datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDMT80060DC
- Package: 8-PowerVDFN
- Datasheet:
- Stock: 4261
- Description: FDMT80060DC datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 20 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 5 days ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerVDFN |
| Number of Pins | 8 |
| Weight | 248.52072mg |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | Dual Cool™, PowerTrench® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Peak Reflow Temperature (Cel) | 260 |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Power Dissipation-Max | 3.2W Ta 156W Tc |
| Element Configuration | Single |
| Turn On Delay Time | 75 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 1.1m Ω @ 43A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 20170pF @ 30V |
| Current - Continuous Drain (Id) @ 25°C | 43A Ta 292A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 238nC @ 10V |
| Rise Time | 47ns |
| Drain to Source Voltage (Vdss) | 60V |
| Drive Voltage (Max Rds On,Min Rds On) | 8V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 19 ns |
| Turn-Off Delay Time | 66 ns |
| Continuous Drain Current (ID) | 292A |
| Gate to Source Voltage (Vgs) | 20V |
| RoHS Status | ROHS3 Compliant |
FDMT80060DC Description
Fairchild Semiconductor's sophisticated PowerTrench? technology is used to make the FDMT80060DC. With extremely low Junction-to-Ambient thermal resistance, advances in both silicon and Dual CoolTM packaging technologies have been coupled to give the lowest rDS(on) while preserving good switching performance.
FDMT80060DC Features
At VGS = 10 V, ID = 43 A, the maximum rDs(on) is 1.1 mQ.
At Vgs = 8 V, Id = 37 A, MaxDs(on)= 1.3 mQ.
Combination of advanced package and silicon for low rDS(on) and high efficiency
Engineered for gentle r ecovery, next generation enhanced body diode technology
8x8 mm MLP package with low profile
MSL1 is a strong package design.
UIL was tested to the nth degree.
RoHS (Restriction of Hazardous Substances) Compliant
FDMT80060DC Applications
Load Switching / OringFET
Synchronous Rectification
DC-DC Convergence
