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FDMT800120DC datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDMT800120DC
- Package: 8-PowerVDFN
- Datasheet:
- Stock: 1969
- Description: FDMT800120DC datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 20 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 5 days ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerVDFN |
| Number of Pins | 8 |
| Weight | 248.52072mg |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | Dual Cool™, PowerTrench® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Technology | MOSFET (Metal Oxide) |
| Peak Reflow Temperature (Cel) | 260 |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Power Dissipation-Max | 3.2W Ta 156W Tc |
| Element Configuration | Single |
| Turn On Delay Time | 29 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 4.14m Ω @ 20A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 7850pF @ 60V |
| Current - Continuous Drain (Id) @ 25°C | 20A Ta 129A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 107nC @ 10V |
| Rise Time | 18ns |
| Drain to Source Voltage (Vdss) | 120V |
| Drive Voltage (Max Rds On,Min Rds On) | 6V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 9.5 ns |
| Turn-Off Delay Time | 40 ns |
| Continuous Drain Current (ID) | 129A |
| Gate to Source Voltage (Vgs) | 20V |
| RoHS Status | ROHS3 Compliant |
FDMT800120DC Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench? process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest RDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.
FDMT800120DC Features
Max rDS(on) = 4.2 m? at VGS = 10 V, ID = 20 A
Max rDS(on) = 6.4 m? at VGS = 6 V, ID = 16 A
Advanced Package and Silicon combination for low rDS(on) and high efficiency
Next-generation enhanced body diode technology, engineered for soft recovery
Low profile 8x8mm MLP package
MSL1 robust package design
100% UIL tested
RoHS Compliant
FDMT800120DC Applications
OringFET / Load Switching
Synchronous Rectification
DC-DC Conversion
