FDMS8670S

FDMS8670S datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • NO: 598-FDMS8670S
  • Package: 8-PowerTDFN
  • Datasheet: pdf
  • Stock: 1047
  • Description: FDMS8670S datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench®, SyncFET™
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Resistance 3.5MOhm
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 30V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Current Rating 42A
JESD-30 Code R-PDSO-F5
Number of Elements 1
Power Dissipation-Max 2.5W Ta 78W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Case Connection DRAIN
Turn On Delay Time 14 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.5m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 4000pF @ 15V
Current - Continuous Drain (Id) @ 25°C 20A Ta 42A Tc
Gate Charge (Qg) (Max) @ Vgs 73nC @ 10V
Rise Time 19ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 37 ns
Continuous Drain Current (ID) 42A
Threshold Voltage 1.5V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 20A
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 200A
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 18 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Weight 68.1mg
Transistor Element Material SILICON

FDMS8670S Description


The FDMS8670S was created with the goal of reducing power conversion losses. The lowest rDS(on) while maintaining great switching performance has been achieved by combining advances in both semiconductor and packaging technology. This device also has a monolithic Schottky body diode, which is very efficient.



FDMS8670S Features


  • Maximum RDS(on) = 3.5mΩ at VGS = 10V, ID = 20A

  • Maximum RDS(on) = 5.0mΩ at VGS = 4.5V, ID = 17A

  • Advanced Package and Silicon combination for low rDS(on) and high efficiency

  • SyncFET Schottky Body Diode

  • MSL1 robust package design

  • RoHS Compliant



FDMS8670S Applications


  • This product is general usage and suitable for many different applications.

  • Synchronous Rectifier for DC/DC Converters

  • Notebook Vcore/GPU low side switch

  • Networking Point of Load low side switch

  • Telecom secondary side rectification


In Stock

Please send RFQ , we will respond immediately.