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FDMS86550 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDMS86550
- Package: 8-PowerTDFN
- Datasheet:
- Stock: 8550
- Description: FDMS86550 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 13 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Number of Pins | 8 |
| Weight | 56.5mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2010 |
| Series | PowerTrench® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| ECCN Code | EAR99 |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | NO LEAD |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | R-PDSO-N5 |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 2.7W Ta 156W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| Turn On Delay Time | 43 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 1.65m Ω @ 32A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 11530pF @ 30V |
| Current - Continuous Drain (Id) @ 25°C | 32A Ta 155A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 154nC @ 10V |
| Rise Time | 27ns |
| Drive Voltage (Max Rds On,Min Rds On) | 8V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 11 ns |
| Turn-Off Delay Time | 42 ns |
| Continuous Drain Current (ID) | 155A |
| JEDEC-95 Code | MO-240AA |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 32A |
| Drain to Source Breakdown Voltage | 60V |
| Pulsed Drain Current-Max (IDM) | 320A |
| Avalanche Energy Rating (Eas) | 937 mJ |
| Height | 1.05mm |
| Length | 5.1mm |
| Width | 6.25mm |
| RoHS Status | ROHS3 Compliant |
FDMS86550 Description
The ON Semiconductor FDMS86550N-Channel MOSFET is produced using an advanced Power Trench? process that has been specially tailored to minimize the on-state resistance and yet maintain superior switching performance.
FDMS86550 Features
Max rDS(on) = 1.65 mΩ at VGS = 10 V, ID = 32 A
Max rDS(on) = 2.2 mΩ at VGS = 8 V, ID = 27 A
Advanced Package and Silicon combination for low rDS(on) and high efficiency
MSL1 robust package design
100% UIL tested
RoHS Compliant
FDMS86550 Applications
Load Switch
Primary Switch in insolated DC-DC
Synchronous Rectifier
