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FDMS86310 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDMS86310
- Package: 8-PowerTDFN
- Datasheet:
- Stock: 1924
- Description: FDMS86310 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
- Delivery:
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| Parameters | |
|---|---|
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 9 ns |
| Turn-Off Delay Time | 35 ns |
| Continuous Drain Current (ID) | 17A |
| JEDEC-95 Code | MO-240AA |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 50A |
| Drain to Source Breakdown Voltage | 80V |
| Height | 1.05mm |
| Length | 5.1mm |
| Width | 5.85mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 13 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Number of Pins | 8 |
| Weight | 68.1mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | PowerTrench® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | FLAT |
| JESD-30 Code | R-PDSO-F5 |
| Number of Elements | 1 |
| Power Dissipation-Max | 2.5W Ta 96W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 96W |
| Case Connection | DRAIN |
| Turn On Delay Time | 28 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 4.8m Ω @ 17A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 6290pF @ 40V |
| Current - Continuous Drain (Id) @ 25°C | 17A Ta 50A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 95nC @ 10V |
| Rise Time | 23ns |
| Drive Voltage (Max Rds On,Min Rds On) | 8V 10V |
FDMS86310 Description
This N-channel MOSFET FDMS86310 is designed to improve the overall efficiency of DC/DC converters using synchronous or conventional switching PWM controllers and to minimize switch node ringing, and is optimized for low gate charge, low rDS (conduction), fast switching speed and body diode reverse recovery performance.
FDMS86310 Features
Max rDS(on) = 4.8 mΩ at VGS = 10 V, ID = 17 A
Max rDS(on) = 6.7 mΩ at VGS = 8 V, ID = 14 A
Advanced Package and Silicon combination for low rDS(on) and high efficiency
Next generation enhanced body diode technology, engineered for soft recovery
MSL1 robust package design
100% UIL tested
RoHS Compliant
FDMS86310 Applications
DC-DC Merchant Power Supply
