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ContactFDMS86300DC
FDMS86300DC datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDMS86300DC
- Package: 8-PowerTDFN
- Datasheet:
- Stock: 7755
- Description: FDMS86300DC datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Vgs(th) (Max) @ Id | 4.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 7005pF @ 40V |
| Gate Charge (Qg) (Max) @ Vgs | 101nC @ 10V |
| Rise Time | 25ns |
| Fall Time (Typ) | 9 ns |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 80V |
| Nominal Vgs | 3.3 V |
| Drain Current-Max (Abs) (ID) | 60A |
| Current - Continuous Drain (Id) @ 25°C | 24A Ta 76A Tc |
| Pulsed Drain Current-Max (IDM) | 260A |
| Avalanche Energy Rating (Eas) | 240 mJ |
| Drive Voltage (Max Rds On,Min Rds On) | 8V 10V |
| Vgs (Max) | ±20V |
| Factory Lead Time | 5 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
| Mount | Surface Mount |
| Packaging | Tape & Reel (TR) |
| Published | 2010 |
| Series | Dual Cool™, PowerTrench® |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| ECCN Code | EAR99 |
| Length | 5.1mm |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Radiation Hardening | No |
| Number of Pins | 8 |
| Additional Feature | ULTRA LOW RESISTANCE |
| Package / Case | 8-PowerTDFN |
| REACH SVHC | No SVHC |
| Height | 1.05mm |
| Width | 5.85mm |
| Mounting Type | Surface Mount |
| Weight | 90mg |
| Operating Temperature | -55°C~150°C TJ |
| Technology | MOSFET (Metal Oxide) |
| Operating Mode | ENHANCEMENT MODE |
| Terminal Form | FLAT |
| JESD-30 Code | R-PDSO-F5 |
| Number of Channels | 1 |
| Subcategory | FET General Purpose Power |
| Number of Elements | 1 |
| JEDEC-95 Code | MO-240AA |
| Case Connection | DRAIN |
| Element Configuration | Single |
| Power Dissipation | 3.2W |
| Turn On Delay Time | 29 ns |
| Threshold Voltage | 2.5V |
| Power Dissipation-Max | 3.2W Ta 125W Tc |
| Continuous Drain Current (ID) | 24A |
| Max Junction Temperature (Tj) | 150°C |
| Transistor Application | SWITCHING |
| Turn-Off Delay Time | 35 ns |
| Transistor Element Material | SILICON |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 3.1m Ω @ 24A, 10V |
Description
The FDMS86300DC is a POWERTRENCH? MOSFET, N-Channel, DUAL COOL? 56 80 V, 110 A, 3.1 mΩ. This N-Channel MOSFET is created utilizing the cutting-edge POWERTRENCH? process from Fairchild Semiconductor, which combines Shielded Gate technology. With the lowest rDS(on) and the best switching performance, possible thanks to incredibly low Junction-to-Ambient thermal resistance, advancements in silicon and DUAL COOL? packaging technologies have been integrated.
Features
High Performance Technology for Extremely Low rDS(on)
100% UIL Tested
RoHS Compliant
DUAL COOL Top Side Cooling PQFN package
Max rDS(on) = 3.1 m at VGS = 10 V, ID = 24 A
Max rDS(on) = 4.0 m at VGS = 8 V, ID = 21 A
Applications
Telecom Secondary Side Rectification
High-End Server/Workstation Vcore Low Side
Synchronous Rectifier for DC/DC Converters
Automotive Electronics
As for Switching Devices in Electronic Control Units
