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FDMS86263P datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDMS86263P
- Package: 8-PowerTDFN
- Datasheet:
- Stock: 8974
- Description: FDMS86263P datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 16 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Number of Pins | 8 |
| Weight | 68.1mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2017 |
| Series | PowerTrench® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| ECCN Code | EAR99 |
| Subcategory | Other Transistors |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | R-PDSO-F5 |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 2.5W Ta 104W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 104W |
| Case Connection | DRAIN |
| Turn On Delay Time | 17 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 53m Ω @ 4.4A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 3905pF @ 75V |
| Current - Continuous Drain (Id) @ 25°C | 4.4A Ta 22A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 63nC @ 10V |
| Rise Time | 10ns |
| Drain to Source Voltage (Vdss) | 150V |
| Drive Voltage (Max Rds On,Min Rds On) | 6V 10V |
| Vgs (Max) | ±25V |
| Fall Time (Typ) | 14 ns |
| Turn-Off Delay Time | 37 ns |
| Continuous Drain Current (ID) | -4.4A |
| Threshold Voltage | -2.9V |
| JEDEC-95 Code | MO-240AA |
| Gate to Source Voltage (Vgs) | 25V |
| Drain Current-Max (Abs) (ID) | 22A |
| Drain-source On Resistance-Max | 0.053Ohm |
| Drain to Source Breakdown Voltage | -150V |
| Pulsed Drain Current-Max (IDM) | 70A |
| Max Junction Temperature (Tj) | 150°C |
| Height | 1.1mm |
| Length | 5mm |
| Width | 5.85mm |
| RoHS Status | ROHS3 Compliant |
FDMS86263P MOSFET Description
The P-Channel MOSFET FDMS86263P presents the circuit designer with a fresh choice that can streamline the circuitry while enhancing performance and parts usage. This device has very low on-resistance in mid-voltage P-Channel silicon technology and a wide operating temperature of -55 to +150 ℃.
FDMS86263P MOSFET Features
RoHS Compliant
Max rDS(on) = 53 mΩ at VGS = -10 V, ID = -4.4 A
Max rDS(on) = 64 mΩ at VGS = -6 V, ID = -4 A
Very low Rds-on in Mid-Voltage P-Channel silicon technology optimized for low Qg
100% UIL tested
This product is optimized for fast switching applications as well as load switch applications
FDMS86263P MOSFET Applications
Synchronous Rectification Applications
UIS Rating System
Active Clamp Switch
Linear Switching Applications
Totem Pole Switching Circuits
Ground-Connected Loads
