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FDMS86252 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDMS86252
- Package: 8-PowerTDFN
- Datasheet:
- Stock: 3760
- Description: FDMS86252 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 8 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Number of Pins | 8 |
| Weight | 74mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | PowerTrench® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | FLAT |
| JESD-30 Code | R-PDSO-F5 |
| Number of Elements | 1 |
| Power Dissipation-Max | 2.5W Ta 69W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 69W |
| Case Connection | DRAIN |
| Turn On Delay Time | 7.7 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 51m Ω @ 4.6A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 905pF @ 75V |
| Current - Continuous Drain (Id) @ 25°C | 4.6A Ta 16A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 15nC @ 10V |
| Rise Time | 2.3ns |
| Drive Voltage (Max Rds On,Min Rds On) | 6V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 3.2 ns |
| Turn-Off Delay Time | 15 ns |
| Continuous Drain Current (ID) | 16A |
| Threshold Voltage | 2.8V |
| JEDEC-95 Code | MO-240AA |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 4.6A |
| Drain to Source Breakdown Voltage | 150V |
| Pulsed Drain Current-Max (IDM) | 20A |
| Avalanche Energy Rating (Eas) | 50 mJ |
| Height | 1.05mm |
| Length | 5mm |
| Width | 6mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
FDMS86252 Description
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench? process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintains superior switching performance.
FDMS86252 Features
Shielded Gate MOSFET Technology
Max rDS(on) = 51 m? at VGS = 10 V, ID = 4.6 A
Max rDS(on) = 70 m? at VGS = 6 V, ID = 3.9 A
Advanced package and silicon combination for low RDS(on) and high efficiency
MSL1 robust package design
100% UIL tested
RoHS Compliant
FDMS86252 Applications
DC-DC Conversion
