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ContactFDMS86200DC
FDMS86200DC datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDMS86200DC
- Package: 8-PowerTDFN
- Datasheet:
- Stock: 1846
- Description: FDMS86200DC datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 17m Ω @ 9.3A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 2955pF @ 75V |
| Current - Continuous Drain (Id) @ 25°C | 9.3A Ta 28A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 42nC @ 10V |
| Rise Time | 4ns |
| Drive Voltage (Max Rds On,Min Rds On) | 6V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 5 ns |
| Turn-Off Delay Time | 23 ns |
| Continuous Drain Current (ID) | 9.3A |
| JEDEC-95 Code | MO-240AA |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 150V |
| Avalanche Energy Rating (Eas) | 294 mJ |
| Max Junction Temperature (Tj) | 150°C |
| Height | 1.05mm |
| Length | 5.1mm |
| Width | 5.85mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 13 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 1 week ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Number of Pins | 8 |
| Weight | 90mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2017 |
| Series | Dual Cool™, PowerTrench® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Form | FLAT |
| JESD-30 Code | R-PDSO-F5 |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 3.2W Ta 125W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 3.2W |
| Case Connection | DRAIN |
| Turn On Delay Time | 16 ns |
FDMS86200DC Description
ON Semiconductor's innovative PowerTrench? process, which includes Shielded Gate technology, is used to make this FDMS86200DC MOSFET. Low Junction-to-Ambient thermal resistance has been paired with advances in both silicon and Dual CoolTM package technologies to provide the lowest rDS(on) while maintaining good switching performance.
FDMS86200DC Features
? Technology for Shielded Gate MOSFETs
? DFN8 Package with Dual CoolTM Top Side Cooling
? VGS = 10 V, ID = 9.3 A, max rDS(on) = 17 m
? VGS = 6 V, ID = 7.8 A, max rDS(on) = 25 m
? Extremely Low rDS with High-Performance Technology (on)
? Completely UIL-tested
? Compliant with RoHS
FDMS86200DC Applications
? In DC DC Converters, the primary MOSFET is used.
? Synchronous Rectifier (Secondary)
? On/Off Switch
