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ContactFDMS86150
MOSFET (Metal Oxide) N-Channel Digi-Reel® 4.85m Ω @ 16A, 10V ±20V 4065pF @ 50V 62nC @ 10V 8-PowerTDFN
- Manufacturer: ON Semiconductor
- NO: 598-FDMS86150
- Package: 8-PowerTDFN
- Datasheet:
- Stock: 4061
- Description: MOSFET (Metal Oxide) N-Channel Digi-Reel® 4.85m Ω @ 16A, 10V ±20V 4065pF @ 50V 62nC @ 10V 8-PowerTDFN (Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 13 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Number of Pins | 8 |
| Weight | 56.5mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Digi-Reel® |
| Series | PowerTrench® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| ECCN Code | EAR99 |
| Terminal Finish | TIN |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| JESD-30 Code | R-PDSO-N5 |
| Number of Elements | 1 |
| Power Dissipation-Max | 2.7W Ta 156W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 156W |
| Case Connection | DRAIN |
| Turn On Delay Time | 18 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 4.85m Ω @ 16A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 4065pF @ 50V |
| Current - Continuous Drain (Id) @ 25°C | 16A Ta 60A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 62nC @ 10V |
| Rise Time | 8.3ns |
| Drive Voltage (Max Rds On,Min Rds On) | 6V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 6 ns |
| Turn-Off Delay Time | 28 ns |
| Continuous Drain Current (ID) | 60A |
| JEDEC-95 Code | MO-240AA |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 100V |
| Pulsed Drain Current-Max (IDM) | 300A |
| Avalanche Energy Rating (Eas) | 726 mJ |
| Height | 1.05mm |
| Length | 5.1mm |
| Width | 6.25mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
FDMS86150 Description
FDMS86150 N-Channel MOSFET is tailored to minimize the on-state resistance and yet maintain superior switching performance. FDMS86150 MOSFET can remove the additional components and improve system reliability in certain applications that require performance improvement of the body diode. FDMS86150 ON Semiconductor is used in Primary DC-DC MOSFET, Synchronous Rectifier, Load Switch.
FDMS86150 Features
RoHS Compliant
MSL1 robust package
Silicon combination
Advanced Package
100% UIL tested
FDMS86150 Applications
Primary DC-DC MOSFET
Secondary Synchronous Rectifier
Load Switch
