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ContactFDMS86101DC
FDMS86101DC datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDMS86101DC
- Package: 8-PowerTDFN
- Datasheet:
- Stock: 7814
- Description: FDMS86101DC datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Terminal Finish | Tin (Sn) |
| Terminal Form | FLAT |
| JESD-30 Code | R-PDSO-F5 |
| Number of Channels | 1 |
| Subcategory | FET General Purpose Power |
| Number of Elements | 1 |
| JEDEC-95 Code | MO-240AA |
| Case Connection | DRAIN |
| Element Configuration | Single |
| Power Dissipation | 125W |
| Turn On Delay Time | 14 ns |
| Power Dissipation-Max | 3.2W Ta 125W Tc |
| Continuous Drain Current (ID) | 14.5A |
| Max Junction Temperature (Tj) | 150°C |
| Transistor Application | SWITCHING |
| Turn-Off Delay Time | 25 ns |
| Transistor Element Material | SILICON |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 7.5m Ω @ 14.5A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 3135pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs | 44nC @ 10V |
| Rise Time | 8.2ns |
| Fall Time (Typ) | 5.5 ns |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 100V |
| Drain Current-Max (Abs) (ID) | 60A |
| Current - Continuous Drain (Id) @ 25°C | 14.5A Ta 60A Tc |
| Pulsed Drain Current-Max (IDM) | 200A |
| Drive Voltage (Max Rds On,Min Rds On) | 6V 10V |
| Vgs (Max) | ±20V |
| Factory Lead Time | 4 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
| Mount | Surface Mount |
| Packaging | Tape & Reel (TR) |
| Series | Dual Cool™, PowerTrench® |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| ECCN Code | EAR99 |
| Length | 5.1mm |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Radiation Hardening | No |
| Number of Pins | 8 |
| Package / Case | 8-PowerTDFN |
| Height | 1.05mm |
| Width | 5.85mm |
| Resistance | 7.5MOhm |
| Mounting Type | Surface Mount |
| Weight | 90mg |
| Operating Temperature | -55°C~150°C TJ |
| Technology | MOSFET (Metal Oxide) |
| Operating Mode | ENHANCEMENT MODE |
| JESD-609 Code | e3 |
Description
The FDMS86101DC MOSFET - N-Channel, POWERTRENCH?, DUAL COOL? 56 Shielded Gate 100 V, 60 A, 7.5 mΩ. This N-Channel MOSFET is made utilizing the cutting-edge POWERTRENCH? process from Fairchild Semiconductor, which combines Shielded Gate technology. The lowest rDS(on) while maintaining good switching performance is now possible because of advancements in both silicon and DUAL COOL? package technologies. This is made possible by the exceptionally low Junction-to-Ambient thermal resistance.
Features
High performance technology for extremely low rDS(on)
100% UIL Tested
RoHS Compliant
Shielded Gate MOSFET Technology
DUAL COOL Top Side Cooling PQFN package
Max rDS(on) = 7.5 m at VGS = 10 V, ID = 14.5 A
Max rDS(on) = 12 m at VGS = 6 V, ID = 11.5 A
Applications
Primary DC?DC MOSFET
Secondary Synchronous Rectifier
Load Switch
Analog Electronics
Audio Power Amplifiers
