FDMS8560S

FDMS8560S Overview

In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 79 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 4350pF @ 13V.This device's continuous drain current (ID) is 35A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 25V and VGS=25V, so the drain-source breakdown voltage is 25V in this case.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 70A.It is [45 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 13 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).

FDMS8560S Features

the avalanche energy rating (Eas) is 79 mJ
a continuous drain current (ID) of 35A
a drain-to-source breakdown voltage of 25V voltage
the turn-off delay time is 45 ns

FDMS8560S Applications

There are a lot of ON Semiconductor FDMS8560S applications of single MOSFETs transistors.

• General Purpose Interfacing Switch
• Power Management Functions
• PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
• Battery Protection Circuit
• Motor control
• Solar Inverter
• Micro Solar Inverter
• Telecom 1 Sever Power Supplies
• Load switching
• Synchronous Rectification