FDMS8333L

FDMS8333L datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • NO: 598-FDMS8333L
  • Package: 8-PowerTDFN
  • Datasheet: pdf
  • Stock: 2100
  • Description: FDMS8333L datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
JESD-30 Code R-PDSO-F5
Number of Elements 1
Power Dissipation-Max 2.5W Ta 69W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 69W
Case Connection DRAIN
Turn On Delay Time 14 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.1m Ω @ 22A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4545pF @ 20V
Current - Continuous Drain (Id) @ 25°C 22A Ta 76A Tc
Gate Charge (Qg) (Max) @ Vgs 64nC @ 10V
Rise Time 4.7ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 4.2 ns
Turn-Off Delay Time 33 ns
Continuous Drain Current (ID) 76A
JEDEC-95 Code MO-240AA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 22A
Drain to Source Breakdown Voltage 40V
Pulsed Drain Current-Max (IDM) 250A
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 25 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Weight 68.1mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench®
JESD-609 Code e3
Pbfree Code yes
Part Status Active

FDMS8333L    Description


   The N-channel MOSFET is designed to improve the overall efficiency of DC-DC converters using synchronous or conventional switching PWM controllers and minimize switch node ringing. It has been optimized for low gate charge, low RDS, fast switching speed and reverse recovery performance of body diodes.


FDMS8333L   Features


Max RDS(on) = 3.1 mΩ at VGS = 10 V, ID = 22 A

Max RDS(on) = 4.3 mΩ at VGS = 4.5 V, ID = 19 A

Advanced Package and Silicon combination for low rDS(on) and high efficiency

Next generation enhanced body diode technology, engineered for soft recovery

MSL1 robust package design

100% UIL tested

RoHS Compliant

Applications

Consumer


FDMS8333L     Applications


low gate charge

 low RDS


In Stock

Please send RFQ , we will respond immediately.