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FDMS7678 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDMS7678
- Package: 8-PowerTDFN
- Datasheet:
- Stock: 2500
- Description: FDMS7678 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
- Delivery:
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| Parameters | |
|---|---|
| Factory Lead Time | 26 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 4 days ago) |
| Mount | Surface Mount |
| Packaging | Tape & Reel (TR) |
| Published | 2006 |
| Series | PowerTrench® |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| ECCN Code | EAR99 |
| Length | 5.1mm |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Radiation Hardening | No |
| Number of Pins | 8 |
| Package / Case | 8-PowerTDFN |
| REACH SVHC | No SVHC |
| Height | 1.05mm |
| Width | 6.25mm |
| Mounting Type | Surface Mount |
| Weight | 74mg |
| Operating Temperature | -55°C~150°C TJ |
| Technology | MOSFET (Metal Oxide) |
| Operating Mode | ENHANCEMENT MODE |
| JESD-609 Code | e3 |
| Terminal Finish | Tin (Sn) |
| Terminal Position | DUAL |
| Terminal Form | FLAT |
| JESD-30 Code | R-PDSO-F5 |
| Subcategory | FET General Purpose Power |
| Number of Elements | 1 |
| JEDEC-95 Code | MO-240AA |
| Case Connection | DRAIN |
| Element Configuration | Single |
| Power Dissipation | 41W |
| Turn On Delay Time | 10 ns |
| Threshold Voltage | 1.5V |
| Power Dissipation-Max | 2.3W Ta 41W Tc |
| Continuous Drain Current (ID) | 17.5A |
| Transistor Application | SWITCHING |
| Drain-source On Resistance-Max | 0.0055Ohm |
| Turn-Off Delay Time | 26 ns |
| Transistor Element Material | SILICON |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 5.5m Ω @ 17.5A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 2410pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs | 39nC @ 10V |
| Rise Time | 4ns |
| Fall Time (Typ) | 3 ns |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 30V |
| Nominal Vgs | 1.5 V |
| Drain Current-Max (Abs) (ID) | 26A |
| Current - Continuous Drain (Id) @ 25°C | 17.5A Ta 26A Tc |
| Pulsed Drain Current-Max (IDM) | 70A |
| Avalanche Energy Rating (Eas) | 54 mJ |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
FDMS7678 Description
FDMS7678 is a 30V N-Channel Power Trench? MOSFET. The N-Channel MOSFET FDMS7678 is produced using an advanced Power Trench? process that has been specially tailored to minimize the on-state resistance. The onsemi FDMS7678 is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
FDMS7678 Features
Max rDS(on) = 5.5 mΩ at VGS = 10 V, ID = 17.5 A
Max rDS(on) = 6.8 mΩ at VGS = 4.5 V, ID = 15 A
High-performance technology for extremely low RDS(on)
Termination is Lead-free
RoHS Compliant
FDMS7678 Applications
Notebook PC
Portable Devices
DC-DC Buck Converters
Notebook Battery Power Management
Load Switch in Notebook
