FDMS3016DC

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 6m Ω @ 12A, 10V ±20V 1385pF @ 15V 23nC @ 10V 8-PowerTDFN


  • Manufacturer: ON Semiconductor
  • NO: 598-FDMS3016DC
  • Package: 8-PowerTDFN
  • Datasheet: pdf
  • Stock: 14504
  • Description: MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 6m Ω @ 12A, 10V ±20V 1385pF @ 15V 23nC @ 10V 8-PowerTDFN (Kg)

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SPECIFICATIONS

Parameters
Lifecycle Status LAST SHIPMENTS (Last Updated: 2 weeks ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Weight 90mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series Dual Cool™, PowerTrench®
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature ULTRA LOW RESISTANCE
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form FLAT
JESD-30 Code R-PDSO-F5
Number of Elements 1
Power Dissipation-Max 3.3W Ta 60W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 60W
Case Connection DRAIN
Turn On Delay Time 9 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6m Ω @ 12A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1385pF @ 15V
Current - Continuous Drain (Id) @ 25°C 18A Ta 49A Tc
Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V
Rise Time 3ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 2 ns
Turn-Off Delay Time 19 ns
Continuous Drain Current (ID) 18A
JEDEC-95 Code MO-240AA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 49A
Drain-source On Resistance-Max 0.006Ohm
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 200A
Avalanche Energy Rating (Eas) 72 mJ
Height 1.05mm
Length 5.1mm
Width 5.85mm
Radiation Hardening No
RoHS Status RoHS Compliant

In Stock

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