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FDMS2672 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDMS2672
- Package: 8-PowerWDFN
- Datasheet:
- Stock: 834
- Description: FDMS2672 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 200V |
| Pulsed Drain Current-Max (IDM) | 20A |
| Height | 750μm |
| Length | 5mm |
| Width | 6mm |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 10 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
| Contact Plating | Gold |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerWDFN |
| Number of Pins | 8 |
| Weight | 210mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2006 |
| Series | UltraFET™ |
| JESD-609 Code | e4 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Resistance | 77MOhm |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 200V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | NO LEAD |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Current Rating | 3.7A |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Power Dissipation-Max | 2.5W Ta 78W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2.5W |
| Turn On Delay Time | 22 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 77m Ω @ 3.7A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 2315pF @ 100V |
| Current - Continuous Drain (Id) @ 25°C | 3.7A Ta 20A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 42nC @ 10V |
| Rise Time | 11ns |
| Drive Voltage (Max Rds On,Min Rds On) | 6V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 10 ns |
| Turn-Off Delay Time | 36 ns |
| Continuous Drain Current (ID) | 3.7A |
FDMS2672 Description
FDMS2672 is an N-Channel UltraFET Trench? MOSFET manufactured by onsemi. The UItraFET FDMS2672 combines characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS(on), low ESR, low total, and Miller gate charge, the onsemi FDMS2672 is ideal for high-frequency DC to DC converters. The Operating and Storage Temperature Range is between -55 and 150℃. And the MOSFET FDMS2672 is in the Power-56-8 package with 2.5w power dissipation.
FDMS2672 Features
Max rDS(on) = 77mΩ at VGS = 10V, ID = 3.7A
Max rDS(on) = 88mΩ at VGS = 6V, ID = 3.5A
Low Miller Charge
RoHS Compliant
In the Power-56-8 package
FDMS2672 Applications
cellular phones
laptop computers
photovoltaic systems
wind turbines
shunt voltage regulator and the series voltage regulator
