FDMS037N08B

FDMS037N08B datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • NO: 598-FDMS037N08B
  • Package: 8-PowerTDFN
  • Datasheet: pdf
  • Stock: 10064
  • Description: FDMS037N08B datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 18 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Weight 68.1mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series PowerTrench®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-F5
Number of Elements 1
Power Dissipation-Max 830mW Ta 104.2W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 830mW
Case Connection DRAIN
Turn On Delay Time 34.9 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.7m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5915pF @ 37.5V
Current - Continuous Drain (Id) @ 25°C 100A Tc
Gate Charge (Qg) (Max) @ Vgs 100nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Turn-Off Delay Time 55.3 ns
Continuous Drain Current (ID) 100A
JEDEC-95 Code MO-240AA
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0037Ohm
Drain to Source Breakdown Voltage 75V
Feedback Cap-Max (Crss) 45 pF
Height 1.05mm
Length 5.1mm
Width 6.25mm
RoHS Status ROHS3 Compliant

FDMS037N08B Description


FDMS037N08B is a 75V N-Channel PowerTrench? MOSFET. The onsemi MOSFET FDMS037N08B is produced using an advanced PowerTrench? process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. The FDMS037N08B can be applied in Synchronous Rectification for ATX,  Server, Telecom PSU, and other data processing.



FDMS037N08B Features


  • RDS(on) = 3.01 m? ( Typ.)@ VGS = 10 V, ID = 50 A

  • Low FOM RDS(on) *QG

  • Low Reverse Recovery Charge, Qrr = 84nC

  • Soft reverse recovery Body Diode

  • Enables highly efficiency in synchronous rectification

  • Fast Switching Speed

  • 100% UIL Tested



FDMS037N08B Applications


  • Synchronous Rectification for ATX 

  • Server 

  • Telecom PSU

  • Battery Protection circuit

  • DC Motor Drives and Uninterruptible Power Supplies

  • Desktop PC


In Stock

Please send RFQ , we will respond immediately.