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FDME910PZT datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDME910PZT
- Package: 6-PowerUFDFN
- Datasheet:
- Stock: 4813
- Description: FDME910PZT datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
- Delivery:
- Payment:
In Stock
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| Parameters | |
|---|---|
| Factory Lead Time | 16 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 6-PowerUFDFN |
| Number of Pins | 6 |
| Weight | 30mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2017 |
| Series | PowerTrench® |
| JESD-609 Code | e4 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) |
| Subcategory | Other Transistors |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| JESD-30 Code | S-PDSO-N3 |
| Number of Elements | 1 |
| Power Dissipation-Max | 2.1W Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2.1W |
| Case Connection | DRAIN |
| Turn On Delay Time | 9 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 24m Ω @ 8A, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 2110pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 8A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 21nC @ 4.5V |
| Rise Time | 11ns |
| Drain to Source Voltage (Vdss) | 20V |
| Drive Voltage (Max Rds On,Min Rds On) | 1.8V 4.5V |
| Vgs (Max) | ±8V |
| Fall Time (Typ) | 46 ns |
| Turn-Off Delay Time | 87 ns |
| Continuous Drain Current (ID) | 8A |
| Gate to Source Voltage (Vgs) | 8V |
| Drain Current-Max (Abs) (ID) | 8A |
| Drain-source On Resistance-Max | 0.024Ohm |
| Drain to Source Breakdown Voltage | -20V |
| Feedback Cap-Max (Crss) | 330 pF |
| Height | 500μm |
| Length | 1.6mm |
| Width | 1.6mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
FDME910PZT Description
FDME910PZT is a -20v P-Channel PowerTrench? MOSFET. The onsemi FDME910PZT is designed specifically for battery charging or load switching in cellular handsets and other ultraportable applications. It features a MOSFET with low on-state resistance and Zener diode protection against ESD. The Operating and Storage Temperature Range is between -55 and 150℃. And the Transistor FDME910PZT is in the UMLP-6 package with 2.1W power dissipation.
FDME910PZT Features
Max rDS(on) = 24 mΩ at VGS = -4.5 V, ID = -8 A
Max rDS(on) = 31 mΩ at VGS = -2.5 V, ID = -7 A
Max rDS(on) = 45 mΩ at VGS = -1.8 V, ID = -6 A
Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin
HBM ESD protection level > 2 kV typical (Note 3)
Free from halogenated compounds and antimony oxides
RoHS Compliant
FDME910PZT Applications
Mobile phones
Tablets
Laptops
Battery charging
Load switching in the cellular handset
