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FDME510PZT datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDME510PZT
- Package: 6-PowerUFDFN
- Datasheet:
- Stock: 4166
- Description: FDME510PZT datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
- Delivery:
- Payment:
In Stock
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| Parameters | |
|---|---|
| Factory Lead Time | 16 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 1 week ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 6-PowerUFDFN |
| Number of Pins | 6 |
| Weight | 30mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | PowerTrench® |
| JESD-609 Code | e4 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) |
| Additional Feature | ESD PROTECTION |
| Subcategory | Other Transistors |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| JESD-30 Code | S-PDSO-N3 |
| Number of Elements | 1 |
| Power Dissipation-Max | 2.1W Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.4W |
| Case Connection | DRAIN |
| Turn On Delay Time | 6.5 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 37m Ω @ 6A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1490pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 6A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 22nC @ 4.5V |
| Rise Time | 10ns |
| Drain to Source Voltage (Vdss) | 20V |
| Drive Voltage (Max Rds On,Min Rds On) | 1.5V 4.5V |
| Vgs (Max) | ±8V |
| Fall Time (Typ) | 54 ns |
| Turn-Off Delay Time | 93 ns |
| Continuous Drain Current (ID) | 6A |
| Threshold Voltage | -500mV |
| Gate to Source Voltage (Vgs) | 8V |
| Drain Current-Max (Abs) (ID) | 6A |
| Drain-source On Resistance-Max | 0.037Ohm |
| Drain to Source Breakdown Voltage | -20V |
| Nominal Vgs | -500 mV |
| Height | 500μm |
| Length | 1.6mm |
| Width | 1.6mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
FDME510PZT Description
FDME510PZT is a P-Channel PowerTrench? MOSFET from the manufacturer ON Semiconductor with a voltage of -20V. FDME510PZT is designed specifically for battery charging or load switching in cellular handsets and other ultra-portable applications. It features a MOSFET with low on-state resistance. The MicroFET 1.6x1.6 Thin package offers exceptional thermal performance for its physical size and is well suited to switching and linear mode applications.
FDME510PZT Features
Max rDS(on) = 37 mΩat VGS = -4.5 V, ID = -5 A
Max rDS(on) = 50 mΩ at VGS = -2.5 V, ID = -4 A
Max rDS(on)= 65 mΩ at VGS = -1.8 V, ID = -3 A
Max rDS(on) = 100 mΩ at VGS = -1.5 V, ID = -2 A
Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin
Free from halogenated compounds and antimony oxides
HBM ESD protection level > 1600V (Note 3)
RoHS Compliant
FDME510PZT Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
